STP80NE03L-06 n - channel enhancement mode o single feature size ? o power mosfet preliminary data n typical r ds(on) = 0.005 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge 100 o c n application oriented characterization description this power mosfet is the latest development of sgs-thomson unique osingle feature sizeo strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters n automotive environment (injection, abs, air-bag, lampdrivers, etc. ) internal schematic diagram december 1997 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain- gate voltage (r gs =20k w ) 30 v v gs gate-source voltage 15 v i d drain current (continuous) at t c =25 o c80a i d drain current (continuous) at t c =100 o c60a i dm ( ? ) drain current (pulsed) 320 a p tot total dissipation at t c =25 o c150w derating factor 1 w/ o c dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 80 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax type v dss r ds(o n) i d STP80NE03L-06 30 v < 0.006 w 80 a 1 2 3 to-220 1/6
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 80 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =15v) 600 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 30 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 15 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 11.72.5v r ds(on) static drain-source on resistance v gs =10v i d =40a v gs =5v i d =40a 0.005 0.006 0.009 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =40 a 30 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 6500 1500 500 8700 2000 700 pf pf pf STP80NE03L-06 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =15v i d =40a r g =4.7 w v gs =5v (see test circuit, figure 3) 40 260 55 350 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v i d =80a v gs =5v 95 30 44 130 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =24v i d =80a r g =4.7 w v gs =5v (see test circuit, figure 5) 70 165 250 95 220 340 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 80 320 a a v sd ( * ) forward on voltage i sd =80a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100 a/ m s v dd =15v t j =150 o c (see test circuit, figure 5) 75 0.14 4 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area STP80NE03L-06 3/6
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STP80NE03L-06 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STP80NE03L-06 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersede s and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... STP80NE03L-06 6/6
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